Lithography equipment companies
7 of 48 companies sell lithography tools or the tools around them: scanners, coater/developer tracks and mask inspection. ASML lists 13.5 nm EUV light and 8 nm resolution on its High NA EXE. Nikon lists ≤38 nm at ≥280 wafers/hour on the NSR-S636E ArF immersion scanner, and Canon lists a 14 nm minimum linewidth on its nanoimprint tool. SMEE, China's scanner maker, lists its SSX600 for 90, 110 and 280 nm nodes. Tokyo Electron cites 92% of coater/developers in CY2024. Read resolution per model: it is not a node label.
| Tools and product families | Patterning resolution | Alignment, overlay or probing accuracy | Rated throughput | Wafer or ingot diametersmm | ||||
|---|---|---|---|---|---|---|---|---|
| ASML | NXE and EXE EUV systems | 13.51 | EXE: 8 nm resolution; numerical aperture 0.55 | — | — | — | Netherlands | 2026-11-11 |
| Canon | FPA-1200NZ2C | — | FPA-1200NZ2C: minimum linewidth 14 nm | FPA-1200NZ2C: overlay ≤4 nm | — | FPA-1200NZ2C: 300 | Japan | 2026-11-11 |
| Lasertec | ACTIS A150 | 13.51 | — | — | — | — | Japan | 2026-11-11 |
| Nikon | NSR-S636E | — | NSR-S636E: ≤38 nm | NSR-S636E: ≤2.1 nm mix-and-match overlay between same-model machines | NSR-S636E: ≥280 wafers/hour at 96 shots | — | Japan | 2026-11-11 |
| SEMES | LOTUS and BLUEICE PRIME cleaners; OMEGA-S/K tracks; Michelan O3/C4 etchers | — | — | — | — | LOTUS: 300 | South Korea | 2026-11-11 |
| SMEE (Shanghai Micro Electronics Equipment) | SSX600 step-and-scan scanner; SSB800 i-line scanner; SSC800 series | — | — | — | — | SSX600: 200 or 300 | China | 2026-11-11 |
| Tokyo Electron | CLEAN TRACK LITHIUS Pro DICE coater/developer | — | — | — | — | LITHIUS Pro DICE: 300 | Japan | 2026-11-11 |
The tools behind each row
All 48 companiesHow to read the columns
Methodology- Tools and product families
- Named equipment models or product families supported by the cited vendor material.
- Operating wavelength nm
- Light wavelength of the named lithography or inspection tool.
- Patterning resolution
- Model-specific resolution or minimum linewidth with the vendor’s qualifiers. Not interchangeable with a process-node label.
- Alignment, overlay or probing accuracy
- The vendor’s own overlay, placement, alignment or probing metric with units and statistical definition. Metrics are not directly comparable across vendors.
- Rated throughput
- Vendor-stated model throughput with units and test conditions; dry-cycle and maximum rates are labelled.
- Wafer or ingot diameters mm
- Model-specific diameters in mm. Crystal-growth entries refer to ingot diameter. Twelve-inch wafers are nominal 300 mm.
- HQ country
- Country of the corporate headquarters or principal corporate address stated by the company.