Deposition and thermal equipment companies

12 of 48 companies cover deposition and thermal steps: ALD, CVD, epitaxy, PVD, MOCVD and anneal. ASM International cites more than 55% of single-wafer ALD in 2024. AIXTRON loads nine 150 mm or six 200 mm wafers per G10-SiC run, Mattson Technology lists 200 °C to 1300 °C on the Helios XP, and Veeco builds MOCVD for the indium-phosphide lasers in 800G and 1.6T optical transceivers. 2 name a tool tied to AI or HBM chips.

12 of 48 companiesChecked 12 Nov 2026

	Tools and product families	Process steps covered	Wafer or ingot diametersmm	Batch or chamber capacity	Process or test temperature°C	Target devices and applications	Market share or position
AIXTRON	G10-SiC Planetary Reactor	Silicon-carbide epitaxy	G10-SiC: 150 and 200	G10-SiC: nine 150 mm or six 200 mm wafers	—	—	—	2026-11-11
Applied Materials	Kinex hybrid bonder	Advanced packaging: die-to-wafer hybrid bonding; epitaxial deposition; eBeam metrology	—	—	—	—	—	2026-11-11
ASM International	Intrepid ES and ESA; Epsilon 2000; Previum preclean	Epitaxial deposition and surface preclean	Intrepid ES: 300; Epsilon 2000: 150 and 200	—	—	Intrepid ES targets advanced transistors and memories	Single-wafer ALD: more than 55% in 2024 (39% in 2018); leading-edge epitaxy: 25% in 2024 (12% in 2020)	2026-11-11
Jusung Engineering	SDP System; Guidance Series; Eureka	ALD, CVD and epitaxial deposition	—	SDP System: five to six wafers simultaneously in one chamber	Vendor states ALD forms uniform thin films below 300°C	Ultra-fine DRAM, 200-plus-layer 3D NAND and sub-10 nm logic	—	2026-11-11
Kokusai Electric	Advanced TSURUGI Plus-III mini-batch deposition platform	ALD and LP-CVD deposition; oxidation; annealing; diffusion	Advanced TSURUGI Plus-III: 300	—	—	Thin-film processing of complex 3D semiconductor devices	—	2026-11-11
Mattson Technology	Helios XP and Helios C200	Rapid thermal processing and annealing	Helios C200: 200	—	Helios XP: 200°C to 1300°C	Helios XP: advanced logic, 3D NAND flash and DRAM	—	2026-11-11
NAURA Technology Group	NMC 612E ICP etcher; Accura LX dielectric etcher; HSE P300 deep-silicon etcher	Plasma etch; PVD/CVD deposition; wet processing; bonding; thermal processing; implantation	NMC 612E: 12-inch wafers (nominal 300 mm)	—	—	Integrated circuits, advanced packaging and compound semiconductors	—	2026-11-11
Piotech	PF-300T and VS-300T Astra PEALD; TS-300 Altair thermal ALD; Dione 300 hybrid bonder; Pleione 300 die-to-wafer fusion bonder	PECVD, ALD, SACVD, HDPCVD and flowable CVD gap fill; W2W and D2W hybrid bonding	—	—	—	Dione 300: high-end memory, advanced logic, backside-illuminated CMOS image sensors, 3D-stacked chips	—	2026-11-11
Tokyo Electron	CLEAN TRACK LITHIUS Pro DICE coater/developer	Deposition; lithography coating/development; etch; cleaning; testing; bonding/debonding	LITHIUS Pro DICE: 300	—	—	LITHIUS Pro DICE supports EUV including High NA	CY2024 worldwide: coater/developer 92%; deposition 28% (ALD 16%, CVD 38%, oxidation/diffusion 37%); dry etch 27%; cleaning 21%; wafer bonder 32%; wafer prober 38%	2026-11-11
ULVAC	ENTRON-EXX	PVD sputter deposition and integrated preclean	—	ENTRON-EXX accommodates up to 12 process modules	—	Logic, DRAM, NAND, nonvolatile memory and packaging	—	2026-11-11
Veeco	Spector IBD; Lumina MOCVD; WaferEtch wet processing	Ion-beam deposition; MOCVD epitaxy; wet processing	—	—	—	InP lasers and 800G/1.6T optical transceivers for hyperscale data centers	—	2026-11-11
WONIK IPS	GEMINI; QUANTA; NOA; HyEta; 300series; LEVATA	CVD/ALD deposition, diffusion and thermal processing	—	—	—	GEMINI for DRAM, NAND and logic; QUANTA for NAND	Claims 50% South Korean ARC and TEOS PECVD share in its SEMICON Europa 2025 profile; methodology undisclosed	2026-11-11

The tools behind each row

All 48 companies

How to read the columns

Methodology

Tools and product families: Named equipment models or product families supported by the cited vendor material.
Process steps covered: Manufacturing or test stages covered by the cited equipment; illustrative rather than an exhaustive company portfolio.
Wafer or ingot diameters mm: Model-specific diameters in mm. Crystal-growth entries refer to ingot diameter. Twelve-inch wafers are nominal 300 mm.
Batch or chamber capacity: Wafers per batch or process chambers, for the cited model.
Process or test temperature °C: Temperature range or limit for the named equipment, with configuration qualifiers.
Target devices and applications: Device types, materials or production uses the source states for the tool.
Market share or position: Segment-specific share or ranking claim, with year and geography. Vendor claims are labelled as claims; segments are not comparable.